QPD1028L

Overview

The QPD1028L is a 750 W (P3dB) discrete Gallium Nitride on Silicon Carbide High Electron Mobility Transistor designed for operation within the 1.2 to 1.4 GHz frequency range. It delivers a typical saturated output power of 59 dBm with an associated large signal gain of 18 dB at saturation. The device operates with a drain bias of +65V and achieves a drain efficiency of 70% at P3dB. This component utilizes the NI780 Eared Package, which incorporates input pre-matching to simplify external circuit design requirements.

Feature Summary

• Discrete GaN on SiC HEMT technology
• Integrated input pre-matching within package
• NI780 Eared Package configuration

Applications

• High-power RF amplification in radar systems
• Electronic warfare applications
• Military communication infrastructure

Procurement Notes

Verify that the specific order matches the NI780 Eared Package designation. Confirm the operational frequency alignment with the 1.2 to 1.4 GHz specification. Ensure thermal management solutions are compatible with the high-power dissipation characteristics inherent to this 750W class device. Validate that the supply voltage requirements align with the specified +65V drain bias parameters.

Selection Notes

Select this component when a high-power discrete solution is required for UHF band operations. The integrated pre-matching feature reduces external matching network complexity compared to unmatched alternatives. Consider the thermal performance capabilities of the GaN on SiC substrate for high-efficiency applications requiring significant output power density.

Part Context

This part belongs to Qorvo's portfolio of discrete Gallium Nitride on Silicon Carbide High Electron Mobility Transistors. These devices are engineered for robust performance in demanding radio frequency environments. The product line emphasizes high power density and efficiency for critical defense and aerospace electronic systems.

Replacement Considerations

Public confirmed substitute part numbers are not available.