QPD1035

Overview

The Qorvo QPD1035 is a 40W discrete Gallium Nitride on Silicon Carbide (GaN-on-SiC) High Electron Mobility Transistor (HEMT). It operates from DC to 6 GHz with a 50V supply voltage. Key electrical parameters include an output power of 50W at P3dB, a drain efficiency of 52.2%, and a linear gain of 15.1dB. The device features input pre-matching for broadband amplifier applications.

Feature Summary

• Discrete GaN-on-SiC HEMT technology
• Input pre-matched for broadband designs
• Suitable for pulse and continuous wave operation
• Low thermal resistance package

Applications

• Military radar systems
• Civilian radar systems
• Professional radio communication
• Test instrumentation
• Broadband or narrowband amplifiers

Procurement Notes

Verify the specific revision suffix against official Qorvo documentation to ensure compatibility with design requirements. Confirm RoHS compliance status through current datasheets. Check for any product change notifications that may affect pinout or performance specifications before finalizing procurement plans.

Selection Notes

Select this component for wideband RF power amplifier designs requiring high efficiency and linearity up to 6 GHz. Ensure the PCB layout supports the low thermal resistance package characteristics. Verify that the biasing circuitry accommodates the 50V operating voltage and input matching network requirements for optimal performance.

Part Context

This part belongs to Qorvo's portfolio of GaN-on-SiC RF power transistors designed for demanding wireless infrastructure and defense applications. It complements other discrete GaN devices by offering a balance of high power density and broadband capability within a standardized surface-mount footprint.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Qorvo engineering support for qualified alternatives if discontinuation occurs.