QPD2025D

Overview

The QPD2025D is a discrete GaAs pHEMT transistor designed for high-frequency applications. It operates from DC to 20 GHz. The device typically delivers 24 dBm output power at P1dB compression. It provides a typical gain of 14 dB. Power-added efficiency at 1 dB compression is typically 58%. The noise figure is typically 0.9 dB. The structure utilizes a 250 um die size without vias.

Feature Summary

• Discrete GaAs pHEMT technology optimized for broadband RF performance
• Vias-free construction supporting high-frequency signal integrity
• High power-added efficiency at 1 dB compression point

Applications

• Broadband RF amplifier circuits
• Test and measurement equipment front-ends
• Wireless infrastructure components

Procurement Notes

Verify the specific manufacturing date code and lot traceability upon order confirmation. Confirm that the received component matches the QPD2025D designation exactly. Check for any physical damage to the die or leads during handling. Ensure storage conditions comply with moisture sensitivity levels if applicable. Review the latest datasheet revision for any minor parameter updates before final integration.

Selection Notes

Select this component when a wide bandwidth extending to 20 GHz is required. Choose it for designs needing moderate output power around 24 dBm. Consider it for applications where low noise figure near 0.9 dB is critical. Evaluate its via-less package for simplified PCB layout requirements in high-frequency zones.

Part Context

This part belongs to Qorvo's portfolio of discrete semiconductor devices. It utilizes proven standard 0.25um power pHEMT process technology. The device serves as a fundamental building block for RF signal chains. It complements integrated solutions by offering modular flexibility in custom amplifier designs.

Replacement Considerations

No public confirmed substitute part numbers are available.