QPD2040D

Overview

The QPD2040D is a pseudomorphic high-electron-mobility transistor (pHEMT) fabricated using gallium arsenide (GaAs) technology. Classified as an RF JFET transistor, it operates with a gain of 13 dB and a noise figure of 1.1 dB. The component is housed in a compact 0.41 mm x 0.34 mm package and supplied on a reel.

Feature Summary

• Utilizes GaAs pHEMT technology for RF performance
• Designed as an RF JFET transistor
• Compact surface-mount packaging

Applications

• RF signal amplification
• Low-noise front-end modules

Procurement Notes

Verify the manufacturer part number QPD2040D against official Qorvo documentation to confirm specifications. Ensure compatibility with required RF frequencies and impedance matching networks before integration into designs.

Selection Notes

Select this component when a low noise figure and moderate gain are required in a minimal footprint. Verify that the GaAs process and pHEMT architecture align with the specific RF system requirements and thermal constraints.

Part Context

This device belongs to the Qorvo portfolio of RF transistors. It is categorized under RF JFET transistors within the broader semiconductor classification, distinct from other Qorvo switch or power amplifier families.

Replacement Considerations

Consult Qorvo technical support for verified cross-reference data. Do not substitute without confirming electrical parameter equivalence and pinout compatibility.