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Product Detailed Parameters
- Description：1.20MM PWR PHEMT
- Series：-
- Mfr：Qorvo
- Package：Tray
- Technology：GaAs pHEMT
- Frequency：0Hz ~ 20GHz
- Gain：11dB
- Voltage - Test：8 V
- Current Rating (Amps)：388mA
- Noise Figure：1dB
- Current - Test：96 mA
- Power - Output：-
- Voltage - Rated：12 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Configuration：-
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Overview
The Qorvo QPD2120D is a discrete Gallium Arsenide (GaAs) Pseudomorphic High Electron Mobility Transistor (pHEMT) with an active gate width of 1200 micrometers. Designed for high-power radio frequency applications, this component delivers an output power of 31 dBm at the 1 dB compression point (P1dB). It provides a small-signal gain of 11.5 dB and achieves a Power Added Efficiency (PAE) of 57% under these specific operating conditions. The device utilizes Qorvo's standard 0.25-micron power pHEMT process technology to ensure performance consistency and reliability in demanding RF environments.
Feature Summary
- High output power capability suitable for power amplifier stages
- Optimized efficiency for improved power consumption management
- Utilizes proven 0.25-micron GaAs pHEMT fabrication process
Applications
- Wireless communication infrastructure power amplifiers
- Radar system transmit modules
- Electronic warfare signal generation
