QPD2160D

QPD2160D

$23.14
  • Description:1.60MM PWR PHEMT
  • Series:-

SKU:38adfc182e1f Category: Brand:

  
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Product Detailed Parameters

  • Description:1.60MM PWR PHEMT
  • Series:-
  • Mfr:Qorvo
  • Package:Tray
  • Technology:GaAs pHEMT
  • Frequency:0Hz ~ 20GHz
  • Gain:10.4dB
  • Voltage - Test:8 V
  • Current Rating (Amps):517mA
  • Noise Figure:1dB
  • Current - Test:128 mA
  • Power - Output:-
  • Voltage - Rated:12 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die
  • Configuration:-

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QPD2160D

Overview

The Qorvo QPD2160D is a 1600µm GaAs pHEMT die designed for high-power RF applications. It delivers an output power of 32.5 dBm at the 1dB compression point (P1dB). The device provides a gain of 10.4 dB and achieves a power-added efficiency (PAE) of 63% at P1dB. Manufactured using Qorvo's standard 0.25µm power pHEMT process, this component integrates advanced semiconductor technology to support demanding signal amplification requirements in communication systems.

Feature Summary

  • Utilizes Qorvo's verified standard 0.25µm power pHEMT manufacturing process for reliability
  • Engineered as a 1600µm GaAs pHEMT die for high-power density performance
  • Optimized for high power-added efficiency in RF power amplification stages

Applications

  • High-power RF power amplification modules
  • Communication system transmitter chains
  • Military and aerospace radar systems

Part Context

The QPD2160D belongs to Qorvo's discrete GaAs pHEMT product family, which includes variants with different gate widths such as the QPD2060D, QPD2080D, and QPD2120D. These components share a common technological foundation based on the 0.25µm process node but are differentiated by their physical dimensions and resulting power capabilities. This specific model represents the higher-power end of that particular series lineup.

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