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The Qorvo QPD2160D is a 1600µm GaAs pHEMT die designed for high-power RF applications. It delivers an output power of 32.5 dBm at the 1dB compression point (P1dB). The device provides a gain of 10.4 dB and achieves a power-added efficiency (PAE) of 63% at P1dB. Manufactured using Qorvo's standard 0.25µm power pHEMT process, this component integrates advanced semiconductor technology to support demanding signal amplification requirements in communication systems.
The QPD2160D belongs to Qorvo's discrete GaAs pHEMT product family, which includes variants with different gate widths such as the QPD2060D, QPD2080D, and QPD2120D. These components share a common technological foundation based on the 0.25µm process node but are differentiated by their physical dimensions and resulting power capabilities. This specific model represents the higher-power end of that particular series lineup.