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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 2A TSMT5
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Source
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：2A
- Rds On (Max) @ Id, Vgs：100mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：3.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：175pF @ 10V
- Power - Max：1.25W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-5 Thin, TSOT-23-5
- Supplier Device Package：TSMT5
- Grade：-
- Qualification：-
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Overview
The QS5K2TR is a dual N-channel silicon MOSFET in a TSMT5 surface-mount package. It features a drain-source voltage of 30V and a continuous drain current of 2A. The device supports low-voltage operation with a drive voltage of 2.5V, achieving typical on-resistance values of 110mΩ at VGS=2.5V, 76mΩ at VGS=4.0V, and 71mΩ at VGS=4.5V. Total gate charge is typically 2.8nC. Power dissipation is rated at 1.25W total (0.9W per element).
Feature Summary
- Low on-resistance for efficient power switching.
- Space-saving small surface mount package.
Applications
- Switching
Procurement Notes
Verify the specific ordering suffix TR against official ROHM documentation to confirm tape-and-reel packaging and quantity specifications. Ensure compatibility with RoHS directives and lead-free manufacturing standards required by your assembly process before finalizing procurement orders.
Selection Notes
Select this component for applications requiring dual N-channel switching within a compact footprint. Evaluate thermal resistance requirements, as the device relies on board mounting for heat dissipation. Confirm that the 2.5V drive capability aligns with the logic levels of the control circuitry to ensure optimal performance and minimal conduction losses.
Part Context
This part belongs to the QS5K series of 2.5V drive N-channel MOSFETs manufactured by ROHM Semiconductor. The TSMT5 package provides a compact solution for space-constrained designs. The product is designed for general-purpose electronic equipment such as audio-visual devices, office automation, and communications equipment.
Replacement Considerations
Consult ROHM technical support for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' dual MOSFETs without verifying pinout, electrical ratings, and thermal characteristics.
FAQ
What is the maximum drain-source voltage rating?
The absolute maximum drain-source voltage (VDSS) is 30V.
How many terminals does the TSMT5 package have?
The TSMT5 package has 5 terminals.
Is the device suitable for use in medical instruments?
No. The product is designed for ordinary electronic equipment. Consultation with sales representatives is required for high-reliability applications like medical instruments.
