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Product Detailed Parameters
- Description：MOSFET 2N-CH 45V 1A TSMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：45V
- Current - Continuous Drain (Id) @ 25°C：1A
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSMT6 (SC-95)
- Grade：-
- Qualification：-
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Overview
The QS6K21TR is a dual N-channel MOSFET manufactured by Rohm Semiconductor, designed for surface mount applications. It features a TSMT8 package with eight terminals and supports a drain-source voltage of 45V. The device delivers a continuous drain current of 4A. Typical on-resistance values are 0.053Ω at a gate drive of 4V, 0.048Ω at 4.5V, and 0.038Ω at 10V. Total gate charge is typically 5.4nC, with power dissipation rated at 1.5W. The component operates within a storage temperature range of -55°C to 150°C and conforms to RoHS standards.
Feature Summary
- Dual N-channel configuration in a compact surface mount package
- Optimized for low on-resistance at 4V gate drive levels
- Fast switching speed capabilities
Applications
- Low voltage DC-DC converter circuits
- Power management modules requiring efficient switching
- General purpose load switching applications
Procurement Notes
Verify the specific ordering suffix against official Rohm documentation to confirm tape and reel packaging quantities. Ensure the part status is current for new designs, as availability may vary. Cross-reference the package dimensions and terminal count with the mechanical drawing provided in the datasheet to guarantee compatibility with the intended PCB footprint.
Selection Notes
Select this component when a dual N-channel solution is required with a 45V rating and 4A current capacity. The 4V drive characteristic makes it suitable for logic-level control interfaces. Compare the total gate charge and on-resistance against alternative packages to ensure thermal performance meets the system's power dissipation requirements under maximum load conditions.
Part Context
This part belongs to Rohm's series of dual MOSFETs optimized for low-voltage driving. The TSMT8 package provides a balance between power handling and board space efficiency. It serves as a discrete solution for integrating two independent channels within a single footprint, simplifying layout for synchronous rectification or bridge driver topologies.
Replacement Considerations
Consult the official replacement list for direct substitutes such as the QS8K21TR, which offers similar specifications but may differ in package size or on-resistance characteristics. Verify pinout compatibility before substitution to avoid circuit redesign.
