QS8J11TCR

Overview

The QS8J11TCR is a dual P-Channel enhancement-mode MOSFET array manufactured by ROHM Semiconductor. It utilizes silicon technology and is housed in a TSMT-8 surface-mount package. The device features a drain-source breakdown voltage of 12 V and supports a continuous drain current of 3.5 A. Key electrical characteristics include a maximum on-resistance of 550 mOhms, a gate-source voltage range of ±10 V, and a threshold voltage of 1.2 V. The component has a power dissipation rating of 550 mW, operates within a temperature range of -55°C to +150°C, and exhibits a typical turn-on delay time of 11 ns.

Feature Summary

• Dual P-Channel configuration for efficient switching control
• Low on-resistance for reduced power loss
• Enhanced thermal stability with high operating temperature limit

Applications

• Low-voltage power switching circuits
• Battery protection modules
• Load switch applications

Procurement Notes

Verify the specific datasheet version when sourcing, as manufacturing details may evolve. Confirm that the TSMT-8 package dimensions align with your PCB footprint requirements. Ensure that the 12V rating meets your circuit's maximum voltage stress conditions. Check for RoHS compliance status if required by your assembly standards. Validate thermal management capabilities given the 550mW power dissipation limit.

Selection Notes

Select this component for applications requiring dual P-Channel switching in compact spaces. The 12V rating suits low-voltage systems, while the 3.5A current capacity handles moderate loads. Consider the TSMT-8 package for SMT assembly processes. Evaluate the 550mW power dissipation against your thermal design constraints. Compare performance metrics with alternative arrays if higher voltage or current ratings are necessary.

Part Context

This part belongs to ROHM’s discrete semiconductor portfolio, specifically within the MOSFET array category. It is designed for modern electronics requiring reliable switching solutions. The TSMT-8 package allows for space-efficient designs in consumer and industrial devices. As a P-Channel device, it complements N-Channel counterparts in full-bridge or high-side switching configurations.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.