QS8K21TR

Overview

The QS8K21TR is a dual N-channel MOSFET manufactured by ROHM Semiconductor, designed for low-voltage drive applications. It features a TSMT-8 surface-mount package with dimensions of 2.8x3.0 mm and a thickness of 0.85 mm. The device supports a drain-source voltage (V_DSS) of 45 V and a continuous drain current (I_D) of 4 A. At a gate-source voltage (V_GS) of 4.5 V, the typical on-resistance (R_DS(on)) is 0.048 Ω, reducing to 0.038 Ω at 10 V. Key switching parameters include a total gate charge (Q_g) of 5.4 nC and a power dissipation rating of 1.5 W. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

• Optimized for 4V drive operation to facilitate compatibility with low-voltage logic interfaces.
• Dual N-channel configuration integrated into a compact TSMT-8 surface mount package.
• Enhanced switching speed characteristics achieved through minimized gate charge.

Applications

• DC-DC converter circuits requiring efficient low-side or high-side switching.
• Motor driver stages for small DC motors in consumer electronics.
• General-purpose switching applications in portable battery-powered devices.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and tape specifications. Confirm RoHS compliance status and lead times directly with authorized distributors, as availability may vary based on production cycles and regional stock levels.

Selection Notes

Select this component when a dual N-channel MOSFET with a 45 V breakdown voltage and 4 A current capacity is required. Ensure the driving circuit can provide sufficient gate voltage to achieve the desired R_DS(on) performance. Verify that the thermal management solution accommodates the 1.5 W power dissipation limit under maximum operating conditions.

Part Context

This part belongs to the QS8 series of dual MOSFETs from ROHM Semiconductor, which are engineered for space-constrained designs. The TSMT-8 package provides a balance between thermal performance and footprint efficiency, making it suitable for dense PCB layouts in modern electronic equipment.

Replacement Considerations

Direct substitutes should match the 45 V V_DSS, 4 A I_D, and TSMT-8 package constraints. Verify pinout compatibility and electrical parameters such as R_DS(on) and Q_g to ensure equivalent switching performance without redesigning the gate drive circuitry.