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Product Detailed Parameters
- Description：MOSFET N/P-CH 60V 3A TSMT8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta), 2A (Ta)
- Rds On (Max) @ Id, Vgs：112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA, 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：4nC @ 5V, 7.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：270pF @ 10V, 750pF @ 10V
- Power - Max：1.1W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：TSMT8
- Grade：-
- Qualification：-
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Overview
The QS8M31TR is a dual complementary MOSFET array manufactured by ROHM Semiconductor, featuring one N-channel and one P-channel transistor in a TSMT-8 surface-mount package. It supports a drain-source voltage of 60V for both channels. The N-channel provides a continuous drain current of 3A with an on-resistance of 137 mΩ, while the P-channel offers 2A with 266 mΩ. Gate-source voltage ratings are ±20V. The device operates within a temperature range of -55°C to +150°C and includes RoHS compliance.
Feature Summary
- Complementary dual configuration integrating N-channel and P-channel transistors
- Low on-resistance design for efficient power switching
- Compact TSMT-8 surface-mount package suitable for space-constrained applications
Applications
- DC-DC converter circuits
- Motor driver interfaces
- Power switch management systems
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and lead times prior to ordering. Ensure storage conditions meet semiconductor handling standards to prevent electrostatic discharge damage during assembly and integration processes.
Selection Notes
Select this component for applications requiring matched N/P channel characteristics in a small footprint. Consider the specific on-resistance values for thermal management calculations. Verify that the 60V rating aligns with system voltage requirements and that the TSMT-8 package fits the PCB layout constraints effectively.
Part Context
This part belongs to the QS8M series of dual MOSFET arrays from ROHM Semiconductor. It complements other variants like the QS8M51TR, offering different voltage and current specifications. The series focuses on providing integrated solutions for power management tasks where space efficiency and switching performance are critical design parameters.
Replacement Considerations
Check datasheets for compatible parts such as the QS8M51TR if higher voltage ratings are needed. Ensure pinout compatibility and electrical parameter alignment when substituting components to maintain circuit functionality and reliability without redesigning the surrounding hardware infrastructure.
