RBK04U04GNS-0000#HBH

Overview

The RBK04U04GNS-0000#HBH is an N-channel single power MOSFET designed for Li-ion battery management systems. It features a Power SON-8 (HSON) surface mount package with dimensions of 5x6 mm and a height of 1.1 mm. The device supports a drain-source voltage (VDSS) of 40V and a continuous drain current (ID) of 35A. Key electrical parameters include a typical on-state resistance (RDS(on)) of 1.2 mΩ at VGS = 10 V and ID = 18 A, with a maximum rating of 1.5 mΩ at 10V. Total gate charge (Qg) is typically 111 nC, and input capacitance (Ciss) is 6900 pF. The component operates within an industrial qualification level and has a maximum power dissipation of 83W.

Feature Summary

• Low on-state resistance to minimize conduction losses in high-current applications
• Integrated current sensing capability for precise battery management
• Surface mount HSON-8 package optimized for compact PCB layouts

Applications

• Li-ion battery management systems
• High-current power switching circuits
• Industrial electronic equipment

Procurement Notes

Verify the specific ordering suffix #HBH against official Renesas documentation to confirm package type, lead finish, and moisture sensitivity level. Ensure the procurement channel provides traceability to the original manufacturer. Confirm that the received components match the active status and industrial qualification level specified in the datasheet before integration into production lines.

Selection Notes

Select this component when designing circuits requiring low RDS(on) for efficiency in 40V battery management applications. The integrated current sensing feature simplifies protection circuitry design. Verify that the thermal requirements of the HSON-8 package can be adequately managed within the target enclosure, considering the 83W power dissipation rating under appropriate mounting conditions.

Part Context

This part belongs to the RBK series of N-channel power MOSFETs from Renesas Electronics. It is specifically engineered for automotive and industrial battery management applications where low loss and compact packaging are critical. The HSON-8 package provides a balance between thermal performance and board space efficiency compared to larger through-hole alternatives.

Replacement Considerations

Check for direct pin-compatible substitutes within the RBK series or other Renesas HSON-8 MOSFETs with similar VDSS, ID, and RDS(on) specifications. Ensure any replacement maintains the current sensing functionality if required by the design. Verify that the alternative part meets the same industrial qualification standards.