RBN50H65T1FPQ-A0#CB0

$5.08

Description：IGBT TRENCH 650V 100A TO-247A
Series：-

SKU:2f6a9ae2ff35 Category: Single IGBTs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 650V 100A TO-247A
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：100 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 50A
Power - Max：250 W
Switching Energy：830µJ (on), 670µJ (off)
Input Type：Standard
Gate Charge：36 nC
Td (on/off) @ 25°C：20ns/93ns
Test Condition：400V, 50A, 16Ohm, 15V
Reverse Recovery Time (trr)：65 ns
Operating Temperature：175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247A
Grade：-
Qualification：-

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RBN50H65T1FPQ-A0#CB0

Overview

The RBN50H65T1FPQ-A0#CB0 is a single IGBT with an integrated fast recovery diode (FRD) manufactured by Renesas Electronics Corporation. It features a collector-emitter voltage rating of 650 V and a continuous collector current capacity of 50 A. The device utilizes trench gate technology to achieve low saturation voltage characteristics, specifically 1.5 V at 25°C and 2.0 V at 105°C. Designed for through-hole mounting in TO-247A packages, it supports high thermal performance with a maximum operating temperature of 175°C.

Feature Summary

Integrates a single IGBT with a built-in fast recovery diode for simplified circuit design
Employs trench gate architecture to minimize conduction losses and improve efficiency
Provides robust thermal management capabilities suitable for high-power applications

Applications

Industrial motor drives and inverters
Switching power supplies
Uninterruptible power systems (UPS)

Procurement Notes

Verify the specific suffix #CB0 against the manufacturer's latest datasheet to confirm package type and electrical tolerances. Ensure that the procurement channel provides original documentation to validate RoHS compliance and lead-free status. Cross-reference the part number with official Renesas databases to avoid counterfeit components and confirm availability status prior to ordering.

Selection Notes

Select this component for applications requiring high voltage isolation and efficient switching at moderate currents. The integrated FRD eliminates the need for external freewheeling diodes, reducing board space. Consider the 650V rating for mains-connected systems and the 50A current limit for load requirements. Evaluate the thermal resistance of the TO-247A package against the expected heat dissipation needs of the target application.

Part Context

This IGBT belongs to Renesas' discrete power semiconductor portfolio, designed for industrial and consumer electronics. It complements other trench-gate devices offering similar voltage ratings but varying current capacities. The TO-247A form factor is standard for medium-power modules, allowing compatibility with existing heatsink infrastructure used in inverter and converter designs within the broader power management ecosystem.