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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 2A 8SOIC
- Series：LittleFET™
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Rds On (Max) @ Id, Vgs：130mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：32nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：340pF @ 25V
- Power - Max：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The RF1K49157 is an N-channel power MOSFET manufactured by Fairchild Semiconductor. It features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 6.3 A at 25°C ambient temperature. The device has a maximum gate-source voltage (Vgs) of ±20 V and a gate charge (Qg) of 88 nC at 20 V. Input capacitance (Ciss) is 1575 pF at 25 V. The on-resistance (Rds(on)) is 30 mΩ at 6.3 A and 10 V. It operates within a junction temperature range of -55°C to 150°C, dissipates up to 2 W, and is housed in an 8-SOIC surface-mount package.
Feature Summary
- N-channel enhancement mode power MOSFET technology
- Surface-mount assembly in 8-SOIC package
- High thermal stability with extended operating temperature range
Applications
- DC-DC converter circuits
- Power switching applications
- Load management systems
Procurement Notes
Verify the exact part number against official manufacturer documentation, as the input model contains a suffix not present in standard public databases for this specific component identifier. Confirm RoHS compliance status and datasheet revision before procurement. Ensure the supplier provides traceable manufacturing origin data consistent with Fairchild Semiconductor specifications.
Selection Notes
Select based on the required 30 V voltage rating and 6.3 A current capacity for low-voltage power switching. Consider the 8-SOIC package for surface-mount compatibility. Evaluate thermal performance requirements against the 2 W dissipation limit and ensure gate drive voltages remain within the ±20 V maximum rating.
Part Context
This component belongs to the discrete semiconductor category, specifically single N-channel MOSFETs. It is designed for general-purpose power switching applications requiring low on-resistance and robust thermal characteristics. The device integrates high-density cell architecture for efficient conduction.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in verified sources. Cross-referencing requires matching electrical parameters such as Vdss, Id, Rds(on), and package type through official manufacturer substitution guides.
