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Product Detailed Parameters
- Description：MOSFET N-CH 200V 9A
- Series：*
- Mfr：Harris Corporation
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The RF1S630 is a single N-channel Power Field-Effect Transistor manufactured by Harris Corporation. It utilizes silicon metal-oxide semiconductor technology and operates in enhancement mode. The device is housed in a TO-263AB (D2PAK) surface-mount package with gull-wing terminals. Key electrical specifications include a maximum drain current of 9A, a minimum drain-source breakdown voltage of 200V, and a maximum on-resistance of 0.400 ohms.
Feature Summary
- N-channel silicon MOSFET construction for power switching applications
- Surface-mount TO-263AB package design for efficient thermal management
- Enhancement mode operation with low on-resistance characteristics
Applications
- DC-DC converter circuits
- Motor control systems
- Power supply output stages
Procurement Notes
Verify the manufacturer datasheet to confirm specific pinout configurations and absolute maximum ratings prior to integration. Ensure that the TO-263AB package dimensions match the target PCB footprint requirements. Check for any lead-free or RoHS compliance documentation if environmental regulations apply to the final assembly process.
Selection Notes
Select this component when a 200V blocking capability and 9A continuous current handling are required in a surface-mount form factor. The 0.400 ohm on-resistance should be evaluated against the specific conduction loss requirements of the application. Consider thermal dissipation capabilities within the TO-263AB package relative to the expected duty cycle and ambient temperature conditions.
Part Context
This part belongs to the Harris Corporation discrete semiconductor lineup, specifically within the field-effect transistor category. It represents a standard power MOSFET solution designed for medium-voltage switching tasks. The TO-263AB packaging is common in industrial electronics for balancing performance and board space efficiency.
Replacement Considerations
Cross-reference with other 200V, 9A N-channel MOSFETs in the TO-263AB package from current manufacturers. Verify that substitute parts meet or exceed the 0.400 ohm on-resistance specification and maintain compatible gate charge characteristics for similar switching speeds.
