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The RF2L24280CB4 is a 280 W, internally matched LDMOS FET designed for RF energy applications. It operates in the frequency range from 2.4 to 2.5 GHz and is qualified up to 32 V operation. The device features integrated ESD protection and utilizes an internally matched pair transistor configuration in a push-pull arrangement. This design supports high efficiency and linear gain operations with a large positive and negative gate-source voltage range, which improves Class C operation performance.
Verify component authenticity through authorized STMicroelectronics distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation. Ensure storage conditions respect humidity sensitivity requirements. Validate that the specific package variant matches design specifications before integration into production workflows.
Select this component when designing systems requiring 280 W output power within the 2.4 to 2.5 GHz band. The internal matching network simplifies circuit design by eliminating external impedance matching components. Consider the 32 V qualification limit for supply voltage planning. The push-pull configuration aids in achieving balanced performance for RF energy generation tasks.
This part belongs to the STMicroelectronics RF MOSFET transistor category. It is specifically categorized as an RF Power MOSFET utilizing Silicon technology. The device falls under the broader sub-category of MOSFETs and is distinct from bipolar RF transistors offered by the same manufacturer.
Consult official STMicroelectronics documentation for verified substitute part numbers. Cross-referencing should be limited to officially confirmed alternatives to ensure electrical compatibility and mechanical fit without assuming generic family replacements.