RF2L27015CG2

Overview

The RF2L27015CG2 is a single-channel N-Channel silicon RF power LDMOS transistor manufactured by STMicroelectronics. Designed for high-frequency applications, it operates within a frequency range of 0.7 to 2.7 GHz. The device delivers an output power of 15 W with a gain of 19 dB at a drain-source voltage (Vds) of 28 V. Key electrical specifications include a drain-source breakdown voltage (Vds) of 60 V, a gate-source voltage (Vgs) range of -6 V to +10 V, and a threshold voltage (Vgs th) of 2.5 V. It features a drain-source on-resistance (Rds On) of 1 Ohm and supports a maximum operating temperature of +200°C. The component is housed in an E2-3 surface-mount package.

Feature Summary

• Utilizes LDMOS technology for robust RF power amplification in the UHF band.
• Capable of sustaining high junction temperatures up to +200°C for thermal resilience.
• Integrated into a compact E2-3 SMD package suitable for automated surface-mount assembly.

Applications

• UHF radio base station power amplifiers
• Broadband RF signal generation circuits
• Industrial, Scientific, and Medical (ISM) equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and humidity sensitivity handling requirements prior to procurement. Cross-reference the Mouser part number 511-RF2L27015CG2 with the original STMicroelectronics documentation to validate authenticity and current production status.

Selection Notes

Select this component when designing circuits requiring 15 W output power within the 0.7–2.7 GHz spectrum. Ensure the design accommodates the 60 V drain-source breakdown voltage and the specified 1 Ohm on-resistance. Verify that the PCB layout supports the E2-3 package dimensions and thermal management needs for +200°C operation.

Part Context

This device belongs to STMicroelectronics' portfolio of RF MOSFET transistors, specifically engineered for high-efficiency power amplification. It is categorized under silicon-based LDMOS technology, distinguishing it from GaAs or GaN alternatives in the same frequency band. The E2-3 package variant offers a standardized footprint for integration into modern RF modules.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate other STMicroelectronics RF LDMOS transistors with similar 15 W output and 2.7 GHz frequency ratings if direct substitution is required.