RF2L27025CG2

Overview

The RF2L27025CG2 is an N-Channel silicon RF power LDMOS transistor manufactured by STMicroelectronics. It operates within a frequency range of 0.7 to 2.7 GHz, delivering 25 W of output power at 28 V. Key electrical parameters include a drain-source breakdown voltage (Vds) of 65 V, a gate-source voltage range of -6 V to +10 V, and a threshold voltage (Vgs th) of 2.5 V. The device features a maximum DC on-resistance (Rds On) of 1 Ohm and provides 18 dB gain. It is housed in an E2-3 surface-mount package with a maximum operating temperature of +200°C.

Feature Summary

• High thermal stability supporting operation up to +200°C
• Designed for broadband RF applications across 0.7 to 2.7 GHz
• Robust LDMOS technology ensuring high durability

Applications

• Broadband communication systems
• ISM band applications
• RF power amplification modules

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with STMicroelectronics or authorized distributors before integration. Confirm that the E2-3 package dimensions match your PCB footprint requirements. Ensure thermal management solutions support the +200°C maximum junction temperature rating during final design validation.

Selection Notes

Select this component when designing circuits requiring 25 W output power in the UHF to SHF ranges. The 65 V breakdown voltage provides headroom for standard 28 V supply rails. Consider the 1 Ohm on-resistance for efficiency calculations and ensure the driving circuit can handle the specified gate voltage limits.

Part Context

This part belongs to STMicroelectronics' RF power LDMOS transistor portfolio, which targets high-performance broadband applications. It complements other devices like the RFXL series and LET series, offering specialized capabilities for fixed-frequency and broadband RF power amplification needs in industrial and communications sectors.

Replacement Considerations

No public substitute part numbers are confirmed for this specific model.