RF2L36040CF2

Overview

The RF2L36040CF2 is an N-channel silicon RF power LDMOS transistor manufactured by STMicroelectronics. It operates within a frequency range of 2.7 to 3.6 GHz, delivering a continuous wave output power of 40 W at 28 V. Key electrical specifications include a drain-source breakdown voltage (Vds) of 60 V, a maximum on-resistance (Rds(on)) of 1 Ohm, and a typical gain of 14 dB. The device features a gate-source voltage range of -6 V to +10 V with a threshold voltage of 2.5 V. Designed for surface-mount installation, it utilizes the A2-3 package and supports a maximum operating temperature of +200°C.

Feature Summary

• High-efficiency RF power amplification in the 2.7–3.6 GHz band
• Robust thermal performance supporting operation up to +200°C
• Integrated ESD protection for enhanced reliability

Applications

• Base station power amplifiers
• Point-to-point microwave radio links
• Broadband RF amplifier modules

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or certified partners. Confirm RoHS compliance status via official documentation. Ensure storage conditions respect humidity sensitivity levels specified in the datasheet to prevent moisture-induced damage during soldering processes.

Selection Notes

Select this component for designs requiring 40 W output power at 28 V bias within the 2.7–3.6 GHz spectrum. Evaluate thermal management requirements given the +200°C maximum junction temperature rating. Ensure the PCB layout accommodates the A2-3 SMD package dimensions and impedance matching networks for optimal gain and efficiency.

Part Context

This part belongs to STMicroelectronics' RF2 series of LDMOS transistors designed for wireless infrastructure. It complements other models like the RF2L36075CF2, which offers higher power output but different packaging and frequency characteristics. The series targets high-reliability applications in cellular base stations and microwave backhaul systems.

Replacement Considerations

Direct pin-compatible substitutes are not explicitly listed in public documentation. Consider evaluating other RF2 series devices such as the RF2L36075CF2 for higher power needs, though package differences (A2-3 vs B2-3) require layout adjustments. Consult STMicroelectronics for current alternative recommendations.