RF2L36075CF2

Overview

The RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from 3.1 to 3.6 GHz. It operates at VDD = 28 V with a drain efficiency of 45% and power gain of 12.5 dB at 3500 MHz. The device supports Class AB, B, or C operation and features integrated ESD protection (HBM 1B, CDM C3). Absolute maximum ratings include a drain-source voltage of 60 V, gate-source voltage of -6 to 10 V, and a maximum junction temperature of 200 °C. Thermal resistance from junction to case is 0.35 °C/W.

Feature Summary

• High efficiency and linear gain operations
• Integrated ESD protection
• Internal input matching for ease of use
• Large positive and negative gate-source voltage range for improved class C operation

Applications

• Multicarrier WCDMA/PCS/DCS/LTE base stations
• S-Band radar

Procurement Notes

Verify component authenticity through authorized STMicroelectronics channels. Confirm datasheet revision DS13249 Rev 2. Check RoHS compliance status via ECOPACK specifications. Validate package marking against official guidelines. Ensure storage conditions remain within specified limits.

Selection Notes

Evaluate thermal management requirements based on RthJC of 0.35 °C/W. Verify PCB material compatibility with Rogers RO4350B test circuit specifications. Assess biasing networks for Class AB, B, or C modulation formats. Consider load mismatch tolerance up to 10:1 VSWR.

Part Context

Part of STMicroelectronics' RF power LDMOS transistor portfolio. Designed specifically for high-power cellular infrastructure and radar systems operating in the 3.1–3.6 GHz band. Utilizes advanced silicon technology for superior thermal stability and low HCI drift.

Replacement Considerations

No officially confirmed substitute part numbers are documented in the provided datasheet. Consult STMicroelectronics sales office for potential alternatives.