RF3L05250CB4

Overview

The RF3L05250CB4 is a 250 W, 28/32 V LDMOS FET designed for wideband communication and ISM applications in the frequency range from HF to 1 GHz. It supports Class AB, B, or C operation for typical modulation formats. Key electrical parameters include a drain-source breakdown voltage of 90 V, a maximum operating voltage of 36 V, and a gate-source voltage range of -8 to 10 V. At 650 MHz with 2.5 dB compression, it delivers 250 W output power with 18 dB gain and 62% drain efficiency. The device features integrated ESD protection (HBM Class 2) and operates up to a maximum junction temperature of 200 °C.

Feature Summary

• High efficiency and linear gain operations
• Integrated ESD protection
• Large positive and negative gate-source voltage range for improved class C operation

Applications

• 2-30 MHz HF or short wave communication
• 30-88 MHz ground communication
• 118-140 MHz Avionics
• 136-174 MHz commercial ground communication
• 30-512 MHz Jammer, ground/air communication
• HF to 1000 MHz ISM instrumentation

Procurement Notes

Verify component authenticity through authorized STMicroelectronics channels. Confirm RoHS compliance status via ECOPACK specifications. Check current product lifecycle status as discontinuation notifications may apply. Ensure thermal management meets the specified junction-to-case resistance requirements during installation.

Selection Notes

Select this component for high-power RF amplification requiring wide bandwidth coverage from HF to 1 GHz. Consider the LBB package dimensions and pin configuration for PCB layout compatibility. Evaluate thermal dissipation capabilities against the 0.32 °C/W junction-to-case resistance specification for the intended application environment.

Part Context

This part belongs to the STMicroelectronics RF power LDMOS transistor family. It shares design characteristics with similar models like the RF3L05150CB4 but offers higher power output at 250 W compared to lower wattage variants. The LBB package provides a standardized form factor for mounting in RF modules.

Replacement Considerations

Direct substitutes are not explicitly listed in the datasheet. Verify compatibility with alternative ST models such as the RF3L05150CB4 by comparing power ratings and frequency ranges. Consult STMicroelectronics technical support for validated cross-references.