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The RF3L05400CB4 is a silicon N-Channel RF power LDMOS transistor manufactured by STMicroelectronics. Designed for frequencies from HF to 1 GHz, it delivers 380 W output power with 17 dB gain at a 28 V drain-source voltage. The device features a 28 V breakdown voltage and operates in through-hole LBB-3 packages. It supports Class AB/B and C modulation formats for wide-band communication.
Verify the current lifecycle status before procurement as this component is marked NRND (Not Recommended for New Designs). Confirm availability through authorized distributors, noting that lead times may be extended due to production constraints. Ensure compliance with RoHS directives and check for any discontinuation notifications prior to finalizing supply chain agreements.
Select this component for high-power RF applications requiring operation up to 1 GHz. The LBB-3 package suits through-hole mounting requirements. Consider the 28 V rating and 380 W output capability when designing matching networks. Verify thermal management needs given the 400 W power handling specification and ensure the design accommodates the large gate voltage range for optimal Class C performance.
This part belongs to the RF3L series of RF power LDMOS transistors from STMicroelectronics. It shares family characteristics such as robust construction and suitability for broadband applications. The CB4 suffix typically denotes specific packaging or testing configurations within the series, distinct from other variants like RF3L05150CB4 which offer lower power ratings.
Check for direct substitutes within the RF3L series, such as RF3L05250CB4 or RF3L05150CB4, if lower power is acceptable. Verify pin compatibility and thermal resistance values. Since the part is NRND, evaluate alternative manufacturers' offerings with similar 400 W/28V specifications and HF-to-1GHz frequency ranges.