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Product Detailed Parameters
- Description：RF MOSFET LDMOS 40V D4E
- Series：-
- Mfr：STMicroelectronics
- Package：Bulk
- Technology：LDMOS
- Frequency：1.2GHz ~ 1.5GHz
- Gain：18.5dB
- Voltage - Test：40 V
- Current Rating (Amps)：1µA
- Noise Figure：-
- Current - Test：1.5 A
- Power - Output：400W
- Voltage - Rated：90 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：D4E
- Supplier Device Package：D4E
- Configuration：-
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Overview
The RF4L15400CB4 is a silicon-based RF power LDMOS transistor manufactured by STMicroelectronics. It delivers 650 W of output power with a drain voltage rating of 28 V or 32 V. The device operates within the frequency range of 0.4 to 1 GHz. It utilizes an LBB-4 package and is designed for through-hole mounting. The component supports continuous drain currents up to 2.5 A and features a maximum operating temperature of +200°C.
Feature Summary
- High efficiency and linear gain operations
- Integrated ESD protection
- Large positive and negative gate/source voltage range for improved class C operation
Applications
- Wide-band communication systems
- ISM applications
- Class AB/B and C amplifier designs
Procurement Notes
Verify component authenticity against official STMicroelectronics documentation before integration. Confirm RoHS compliance status via current datasheets. Check for obsolete status indicators as availability may be limited. Ensure supply chain sources provide valid traceability records. Validate packaging specifications against engineering requirements prior to procurement.
Selection Notes
Select this component for high-power RF applications requiring operation between 0.4 and 1 GHz. Consider the 28/32 V drain voltage capability when designing power supply rails. Evaluate thermal management solutions given the 650 W output and +200°C junction temperature limit. Verify compatibility with LBB-4 through-hole mounting constraints in the final assembly layout.
Part Context
This part belongs to the STMicroelectronics RF power LDMOS transistor family, specifically engineered for broadband communication and ISM band usage. It represents a high-power segment within the manufacturer's portfolio, distinct from lower-wattage variants like the RF3L series. The technology targets robust performance in linear amplification scenarios.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Engineering teams should consult official STMicroelectronics replacement guides or contact technical support directly for validated cross-reference data.
