RF5L08600CB4

RF5L08600CB4

  • Description:RF MOSFET LDMOS 50V D4E
  • Series:-

SKU:d9f6bfb8380f Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V D4E
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:400MHz ~ 1GHz
  • Gain:19.5dB
  • Voltage - Test:50 V
  • Current Rating (Amps):1µA
  • Noise Figure:-
  • Current - Test:110 mA
  • Power - Output:650W
  • Voltage - Rated:115 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:D4E
  • Supplier Device Package:D4E
  • Configuration:-

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RF5L08600CB4

Overview

The RF5L08600CB4 is a silicon-based RF power LDMOS transistor manufactured by STMicroelectronics. It delivers 650 W of output power with a 50 V drain supply voltage, operating within the 0.4 to 1 GHz frequency range. The device utilizes an internally matched push-pull configuration for high efficiency and linear gain. It features integrated ESD protection and large positive/negative gate-source voltage tolerance to support Class C operation. The component exhibits excellent thermal stability and low HCI drift, designed for robust performance in demanding RF applications.

Feature Summary

  • Internally matched pair transistors in push-pull configuration
  • Integrated ESD protection
  • Large positive and negative gate-source voltage range
  • Excellent thermal stability and low HCI drift

Applications

  • Avionic communication systems
  • Broadband RF power amplification
  • Military radar transmitters

Procurement Notes

This component carries an NRND status, indicating it is not recommended for new designs. Verify current availability through authorized distributors as stock levels fluctuate. Confirm RoHS compliance details via official documentation before integration. Check for any recent discontinuation notifications or end-of-life updates from STMicroelectronics to ensure long-term supply chain viability.

Selection Notes

Select this part for high-power applications requiring operation between 0.4 and 1 GHz. Ensure the design supports 50 V drain biasing and accommodates the specific thermal requirements for 650 W output. Consider the internal matching network which simplifies circuit design but limits impedance flexibility compared to unmatched devices. Verify that the application environment aligns with the specified temperature ranges and humidity sensitivity classifications.

Part Context

The RF5L08600CB4 belongs to STMicroelectronics' RFXL series of RF power LDMOS transistors. This series is engineered for high-performance broadband communications across various frequency bands. The component shares architectural similarities with other parts in the family, such as the RF5L08350CB4, differing primarily in power handling capabilities and specific frequency optimization targets.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Evaluate the RF5L08350CB4 for lower power requirements within the same frequency band, though functional equivalence must be verified against specific datasheet parameters.

RF5L08600CB4RF5L08600CB4

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