RF5L10111K0CB4

Overview

The RF5L10111K0CB4 is an RF power LDMOS transistor manufactured by STMicroelectronics. It operates within the frequency range of 1030 to 1090 MHz and delivers a continuous wave output power of 1000 W at a drain voltage of 50 V. The device utilizes silicon technology and is housed in a tray package. It is classified as an RF MOSFET transistor designed for high-power radio frequency applications.

Feature Summary

• High-efficiency and linear gain operations
• Integrated ESD protection
• Internally matched pair transistors in push-pull configuration
• Large positive and negative gate-source voltage range for improved class C operation
• Excellent thermal stability with low HCI drift

Applications

• Avionic applications

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or official channels. Confirm RoHS compliance status via current datasheets. Check moisture sensitivity levels and storage conditions prior to assembly. Ensure ordering suffixes match exact specifications. Validate supply chain documentation against manufacturer records.

Selection Notes

Select this component for designs requiring 1000 W output power in the 1030-1090 MHz band. Ensure thermal management solutions support LDMOS heat dissipation requirements. Verify biasing circuits accommodate the large gate-source voltage range. Confirm impedance matching networks align with internal matching capabilities.

Part Context

This part belongs to STMicroelectronics' RF power LDMOS transistor family. It shares design characteristics with other avionic-grade RF transistors like the RF5L0912750CB4, though operating frequencies and power levels differ. The series emphasizes high efficiency and linear gain for demanding radio frequency environments.

Replacement Considerations

No public confirmed substitute part numbers are available.