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The RGC80TSX8RGC11 is a 1800V, 40A Field Stop Trench IGBT from ROHM Semiconductor, housed in a TO-247N package. It features integrated reverse conducting diode functionality with low forward voltage. Key electrical parameters include a collector-emitter saturation voltage of 1.75V typ., turn-on time of 80ns, and turn-off time of 565ns at 25°C. Maximum power dissipation is rated at 535W, with switching energies of 1.85mJ (on) and 1.6mJ (off). The device supports operation up to 175°C junction temperature.
Verify the complete ordering code including suffixes such as GC11 to ensure correct packaging and specifications. Confirm that the TO-247N package variant matches thermal management requirements. Check AEC-Q101 compliance if automotive use is intended, though standard versions may differ. Ensure gate drive compatibility with specified switching times. Validate supply chain authenticity through authorized distributors.
Select this component for applications requiring high blocking voltage and fast switching speeds. Consider the 1800V rating for medium-voltage industrial systems. Evaluate thermal performance against the 535W dissipation limit. Compare switching losses with alternative trench technologies. Ensure the integrated diode meets reverse recovery requirements for the specific circuit topology.
This part belongs to ROHM's RGC series of reverse conducting IGBTs. It utilizes Field Stop Trench technology to balance conduction and switching losses. The series is designed for efficiency in high-power conversion applications. It complements other ROHM IGBT families by offering integrated diode functionality without external components.
Direct substitutes include RGC80TSX8R. Verify pinout compatibility and thermal characteristics before substitution. Ensure voltage and current ratings meet or exceed original design requirements. Check switching energy values for equivalent performance.