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The RGS80TS65HRC11 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for automotive applications. It features a 650 V collector-emitter voltage (VCEO) and a continuous collector current of 40 A at 25°C, with a maximum saturation voltage of 2.1 V. The device offers 8 seconds of short-circuit tolerance and operates within a junction temperature range of -40°C to +175°C. Packaged in a TO-247N-3 through-hole housing, it dissipates up to 272 W of power. This component holds AEC-Q101 qualification, ensuring reliability for high-power switching environments.
Verify the specific suffix C11 against the manufacturer's latest datasheet to confirm packaging details and compliance status. Ensure the ordering quantity aligns with the standard tube packaging configuration provided by the supplier. Cross-reference the part number with official ROHM documentation to validate availability and lead times before finalizing procurement plans.
Select this component when an 8-second short-circuit withstand time is required for automotive power stages. The 650V rating suits medium-voltage DC bus applications. Compare the 2.1V saturation voltage against lower-loss alternatives if conduction efficiency is the primary design constraint. Ensure the TO-247N package fits the thermal management strategy of the target PCB layout.
This part belongs to the RGW/RGS series of high-speed IGBTs from ROHM. The series eliminates the traditional trade-off between low conduction loss and fast switching. It utilizes field stop trench technology to achieve soft switching characteristics, reducing voltage overshoot during turn-off. This family is specifically engineered for both automotive and industrial power conversion designs requiring high reliability.
The RGW80TS65HRC11 is listed as an alias or related variant in distributor catalogs. Verify electrical parameters such as Vce(sat) and switching times before substitution. Other members of the RGS series may offer different current ratings or short-circuit tolerances.