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The RGSX5TS65DHRC11 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a TO-247N-3 package with through-hole mounting. The device supports a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (IC) of 88 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage (VCE(sat)) of 2.1 V, a gate-emitter maximum voltage of 30 V, and a power dissipation (Pd) of 326 W. It operates within a temperature range of -40°C to +175°C and holds AEC-Q101 automotive qualification.
Verify the specific suffix DHRC11 against official ROHM documentation to confirm pinout, packaging type, and any unique marking requirements. Ensure the component matches the required automotive grade specifications for your target application before procurement.
Select this component when a 650V IGBT with high current capacity and automotive qualification is required. Compare VCE(sat) and switching losses against alternative models like RGSX5TS65EHRC11 or RGS00TS65DHRC11 based on specific thermal and efficiency constraints.
This part belongs to the RGS series of automotive IGBTs from ROHM. It utilizes Field Stop Trench technology to reduce switching losses while maintaining low saturation voltage. The series is designed for high-reliability applications in electric and hybrid vehicles.
Check ROHM datasheets for direct replacements such as RGSX5TS65EHRC11 or RGS00TS65DHRC11. Verify pin compatibility and electrical parameter equivalence before substitution.