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The RGT30TM65DGC9 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes Trench Field-Stop technology and is housed in a TO-220NFM package for through-hole mounting. The device features a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 14 A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage (Vce(sat)) of 2.1 V at 15 V gate drive and 15 A current. The component supports a power dissipation (Pd) of 32 W, operates within a junction temperature range of -40°C to +175°C, and includes an integrated fast recovery diode.
Verify the specific suffix GC9 corresponds to the tube packaging configuration when sourcing. Confirm RoHS compliance status via the manufacturer's latest documentation. Ensure thermal management designs account for the 32 W power dissipation rating under expected operating conditions. Cross-reference the part number with official ROHM databases to confirm current production status and availability.
Select this component for applications requiring 650 V blocking voltage and moderate current handling up to 14 A. The TO-220NFM package suits through-hole PCB layouts where robust mechanical mounting is required. Consider the 2.1 V saturation voltage for efficiency calculations in low-to-medium frequency switching environments. Evaluate thermal resistance requirements based on the 32 W dissipation limit and ambient operating temperatures.
This IGBT belongs to the RGT30 series from ROHM Semiconductor, which focuses on trench field-stop technology for improved switching performance. The GC9 suffix typically denotes the specific tape-and-reel or tube packaging variant distributed by authorized channels. It serves as a discrete power switch solution within broader power electronics modules or standalone inverter circuits.
Direct replacements must match the 650 V / 14 A rating, TO-220NFM package, and short-circuit tolerance. Verify pinout compatibility and thermal characteristics before substitution.