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The RGT50TM65DGC9 is a trench field-stop IGBT from ROHM Semiconductor, designed for inverter applications with a 5µs short-circuit withstand time. It features a 650V collector-emitter voltage rating and a continuous collector current of 13A at 100°C. The typical saturation voltage is 1.65V, with a turn-off time of 65ns. A built-in fast recovery diode (FRD) complements the device. Packaged in TO-220NFM, it supports operation up to 175°C junction temperature and complies with RoHS standards.
Verify the specific suffix GC9 against official datasheets to confirm package and compliance details. Confirm availability status as this series may be designated for existing customers only. Check for product change notifications regarding manufacturing relocation or material updates before procurement.
Select based on the 650V rating and 13A current capacity at elevated temperatures. Ensure thermal management supports the specified power dissipation. Verify that the 5µs short-circuit tolerance meets system protection requirements. Compare with other TO-220NFM options if higher current density is needed.
This component belongs to the RGT50TM65D series, characterized by trench field-stop IGBT technology. It is part of ROHM's lineup for high-efficiency power switching. The GC9 suffix typically denotes the specific packaging and environmental compliance configuration for this variant.
Direct substitutes include RGT40TM65DGC9 for lower current needs or RGT50NL65DGTL for surface mount applications. Verify pin compatibility and electrical parameters when cross-referencing with other ROHM IGBT models.