RGT50TS65DGC11

$3.05

Description：IGBT TRENCH FS 650V 48A TO-247N
Series：-

SKU:f4ee71f2c9e7 Category: Single IGBTs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 48A TO-247N
Series：-
Mfr：Rohm Semiconductor
Package：Tube,Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：48 A
Current - Collector Pulsed (Icm)：75 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 25A
Power - Max：174 W
Switching Energy：-
Input Type：Standard
Gate Charge：49 nC
Td (on/off) @ 25°C：27ns/88ns
Test Condition：400V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)：58 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247N
Grade：-
Qualification：-

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RGT50TS65DGC11

Overview

The RGT50TS65DGC11 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in a TO-247N package. It features a collector-emitter voltage (VCES) of 650 V and a continuous collector current (IC) of 25 A at 100°C case temperature. The typical collector-emitter saturation voltage (VCE(sat)) is 1.65 V at 25°C. The device includes an integrated Very Fast & Soft Recovery FRD with a reverse recovery time (trr) of 58 ns at 25°C. It supports a short circuit withstand time of 5 μs and operates within a junction temperature range of -40°C to +175°C.

Feature Summary

Low Collector-Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time of 5μs
Built-in Very Fast & Soft Recovery FRD

Applications

General Inverter
UPS
Power Conditioner

Procurement Notes

Verify the component status before procurement as it may be subject to lifecycle changes. Confirm RoHS compliance and lead plating specifications against project requirements. Ensure thermal management designs account for the specified power dissipation limits at varying case temperatures. Cross-reference the datasheet revision date to ensure alignment with latest electrical characteristics.

Selection Notes

Select this component for applications requiring high-speed switching and low conduction losses. Consider the 5μs short circuit withstand capability for robust protection schemes. Evaluate the thermal resistance values to determine appropriate heatsinking solutions. Verify that the gate drive voltage aligns with the specified 15V threshold for optimal performance.

Part Context

This part belongs to the RGT series of Field Stop Trench IGBTs from ROHM. It is designed to offer a balance between low on-state voltage and fast switching speeds. The TO-247N packaging facilitates through-hole mounting for industrial power electronics. It is distinct from automotive-grade variants which require specific reliability certifications.

Replacement Considerations

Direct substitutes must match the 650V rating, 25A current capacity, and TO-247N package. Verify compatibility of internal FRD characteristics if the freewheeling diode function is utilized. Check thermal resistance parameters to ensure equivalent heat dissipation capabilities in the existing design.