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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 48A TO-247G
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：48 A
- Current - Collector Pulsed (Icm)：75 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 25A
- Power - Max：174 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：49 nC
- Td (on/off) @ 25°C：27ns/88ns
- Test Condition：400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：58 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247G
- Grade：-
- Qualification：-
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Overview
The RGT50TS65DGC13 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for inverter applications with a short-circuit withstand time of 5µs. It features a 650V collector-emitter voltage rating and a continuous collector current of 25A at 100°C. The device integrates a very fast and soft recovery FRD (RFN-Series) diode. Key electrical parameters include a typical collector-emitter saturation voltage of 1.65V and a typical reverse recovery time of 65ns. Packaged in TO-247GE, it supports a maximum power dissipation of 47W and operates within a storage temperature range of -55°C to 175°C.
Feature Summary
- Short-circuit tolerance of 5µs suitable for inverter circuits
- Integrated RFN-Series Fast Recovery Diode with soft recovery characteristics
- Low collector-emitter saturation voltage for reduced conduction loss
- RoHS compliant lead plating
Applications
- Inverter systems
- General purpose switching applications requiring short-circuit robustness
Procurement Notes
Verify the specific ordering suffix GC13 against official ROHM documentation to confirm package type and compliance status. Confirm availability as this component may be subject to production lifecycle changes or discontinuation notices for new designs. Ensure the supplier provides valid traceability and authenticity guarantees prior to purchase.
Selection Notes
Select this component when a 5µs short-circuit withstand capability is required for inverter topologies. Compare the 1.65V Vce(sat) and 65ns tf specifications against alternative trench IGBTs to ensure compatibility with existing gate drive requirements and thermal management constraints for the target application power levels.
Part Context
This part belongs to ROHM's TS series of Field Stop Trench IGBTs, which are optimized for inverter use. The 'T' designation indicates the 5µs short-circuit withstand feature. It is distinct from high-speed WS series parts, focusing on robustness rather than ultra-fast switching frequencies.
Replacement Considerations
Check for direct pin-compatible substitutes within the ROHM RGTH or RGT series that share the same 650V rating and TO-247GE package. Verify that any replacement maintains the 5µs short-circuit tolerance and similar Vce(sat) values to avoid redesigning the thermal or gate drive circuitry.
