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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 26A TO-3PFM
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：26 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 25A
- Power - Max：59 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：49 nC
- Td (on/off) @ 25°C：27ns/94ns
- Test Condition：400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：58 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3PFM, SC-93-3
- Supplier Device Package：TO-3PFM
- Grade：-
- Qualification：-
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Overview
The RGTH50TK65DGC11 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes Field Stop Trench technology to achieve high-speed switching capabilities with low saturation voltage. The device features an integrated Fast Recovery Diode (FRD). Key electrical parameters include a collector-emitter breakdown voltage of 650 V and a continuous collector current of 26 A at 25°C. The maximum power dissipation is rated at 59 W, and the component operates within a junction temperature range of -40°C to +175°C. It is housed in a TO-3PFM package designed for through-hole mounting.
Feature Summary
- Field Stop Trench IGBT structure for optimized switching performance
- Integrated Fast Recovery Diode (FRD)
- High-speed switching characteristics
- Low collector-emitter saturation voltage
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Welding equipment
- Induction Heating (IH) appliances
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest datasheet to confirm pinout compatibility and thermal specifications. Ensure that the procurement channel provides original components with traceable manufacturing dates. Check for RoHS compliance status and lead times directly with authorized distributors or the manufacturer before placing orders.
Selection Notes
Select this component when designing circuits requiring 650V blocking capability with moderate current handling around 26A. The TO-3PFM package is suitable for applications needing robust thermal management via heatsink mounting. Consider the trade-off between conduction loss and switching speed inherent to the Field Stop Trench technology when evaluating efficiency requirements.
Part Context
This part belongs to the RGTH series of high-speed switching IGBTs from ROHM. The series is characterized by the elimination of the traditional trade-off between low conduction loss and fast switching. These devices are standard-grade products intended for general industrial and consumer electronics applications rather than automotive use.
Replacement Considerations
Direct replacements should be sought within the ROHM RGTH series or comparable Field Stop Trench IGBTs from other manufacturers offering similar 650V/26A ratings in TO-3PFM packages. Verify that any substitute maintains identical pin configuration and thermal resistance values.
