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The RGTH80TS65GC13 is a single N-channel IGBT from ROHM Semiconductor, utilizing trench field-stop technology in a TO-247GE-3 package. It features a collector-emitter voltage of 650V and a continuous collector current of 71A at 25°C. The device has a typical saturation voltage of 2V and supports a power dissipation of 202W. Operating temperatures range from -40°C to +175°C, with a maximum gate-emitter voltage of 30V.
Verify the specific suffix against official datasheets to confirm pinout and thermal characteristics. Ensure the procurement channel provides valid traceability documentation. Confirm RoHS compliance status matches project requirements before finalizing orders.
Select this component for applications requiring high-speed switching and robust short-circuit protection. The TO-247GE package facilitates efficient heat dissipation for medium-power designs. Evaluate thermal resistance parameters against the system's cooling capabilities to ensure reliable operation under load.
This part belongs to ROHM’s trench field-stop IGBT series, designed for efficiency and reliability. It complements other models like the RGT80TS65DGC13 but offers distinct electrical characteristics suited for modern inverter and drive applications requiring fast switching speeds.
The RGT80TS65DGC13 is a related model within the same family. Verify compatibility regarding saturation voltage and switching times before substitution. Cross-reference pinouts and thermal specifications to ensure mechanical fit.