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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 95A TO-247GE
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：95 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 50A
- Power - Max：276 W
- Switching Energy：1.17mJ (on), 940µJ (off)
- Input Type：Standard
- Gate Charge：104 nC
- Td (on/off) @ 25°C：41ns/142ns
- Test Condition：400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247GE
- Grade：-
- Qualification：-
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Overview
The RGTV00TS65GC13 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a TO-247GE-3 package with through-hole mounting. Key electrical ratings include a collector-emitter voltage (VCES) of 650 V and a continuous collector current (IC) of 95 A at 25°C case temperature, derating to 50 A at 100°C. The typical collector-emitter saturation voltage (VCE(sat)) is 1.5 V at IC=50A and VGE=15V. Power dissipation reaches 276 W at TC=25°C. The device supports a pulsed collector current of 200 A and operates within a junction temperature range of -40°C to +175°C.
Feature Summary
- Low Collector-Emitter Saturation Voltage
- High Speed Switching & Low Switching Loss
- Short Circuit Withstand Time of 2μs
Applications
- Power Factor Correction (PFC)
- Solar Inverters
- Uninterruptible Power Supplies (UPS)
- Welding Equipment
- Induction Heating (IH)
Procurement Notes
Verify the specific ordering suffix C13 corresponds to tube packaging with a basic ordering unit of 600 pieces. Confirm RoHS compliance and lead plating specifications against the latest manufacturer datasheet revision before finalizing procurement orders for production integration.
Selection Notes
Select this component for designs requiring high short-circuit robustness and low conduction losses in medium-power applications. Ensure thermal management capabilities support the specified power dissipation limits at expected operating case temperatures. Validate gate drive requirements against the specified threshold and charge parameters.
Part Context
This part belongs to the RGTV series of 650V Field Stop Trench IGBTs from ROHM. It is designed as an alternative to previous generations, offering improved switching performance and short-circuit withstand capability compared to standard trench IGBTs, targeting efficiency improvements in industrial power conversion systems.
Replacement Considerations
Direct pin-compatible replacements within the same family may include variants with different current ratings or packaging codes. Verify thermal resistance and switching energy loss characteristics when substituting with other 650V IGBTs to ensure circuit stability.
