SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RGTV80TS65GC13 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a TO-247GE package with a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (IC) of 40 A at 100°C. The device exhibits a typical collector-emitter saturation voltage (VCE(sat)) of 1.5 V at 25°C and supports a pulsed collector current of 160 A. Power dissipation reaches 234 W at 25°C case temperature, reducing to 117 W at 100°C. Thermal resistance from junction to case is 0.64 °C/W. The component operates within a junction temperature range of -40°C to +175°C and includes a short-circuit withstand time of 2 μs.
Verify the specific ordering suffix GC13 to confirm tube packaging containing 600 units per box. Confirm that the product status remains active for new designs, as ROHM may update lifecycle statuses without immediate notice. Ensure compliance with local environmental regulations regarding lead-free materials before finalizing procurement specifications.
Select this component for applications requiring robust short-circuit tolerance of 2 μs. Evaluate thermal management requirements based on the 0.64 °C/W junction-to-case resistance. Consider the 1.5 V typical saturation voltage for efficiency optimization in high-current inverter topologies. Verify gate drive compatibility with the specified threshold voltage characteristics.
This part belongs to the RGTV series of field stop trench IGBTs designed for inverter applications. It shares the TO-247GE form factor with other ROHM discrete power devices but is distinguished by its specific 650V rating and 2 μs short-circuit capability. The series targets cost-effective solutions for renewable energy and industrial power conversion systems.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult ROHM sales representatives for cross-reference recommendations or alternative components with matching electrical ratings and package dimensions.