RGW00TS65CHRC11

$4.55

Description：IGBT 650V 96A TO-247N
Series：-

SKU:70be2f2a97c2 Category: Single IGBTs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：IGBT 650V 96A TO-247N
Series：-
Mfr：Rohm Semiconductor
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：96 A
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 50A
Power - Max：254 W
Switching Energy：180µJ (on), 420µJ (off)
Input Type：Standard
Gate Charge：141 nC
Td (on/off) @ 25°C：49ns/180ns
Test Condition：400V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)：33 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247N
Grade：-
Qualification：-

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RGW00TS65CHRC11

Overview

The RGW00TS65CHRC11 is a single-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor, utilizing silicon technology in a TO-247N-3 through-hole package. It features a Field Stop Trench structure with an integrated Silicon Carbide Schottky Barrier Diode (SiC-SBD). Key electrical parameters include a collector-emitter voltage of 650 V and a continuous collector current of 96 A at 25°C. The device exhibits a maximum collector-emitter saturation voltage of 1.9 V and a gate-emitter leakage current of 200 nA. Power dissipation is rated at 254 W, with an operating temperature range from -40°C to +175°C.

Feature Summary

Integrates a high-speed Fast Switching Type IGBT with a built-in SiC-SBD to reduce turn-on switching loss.
Utilizes Field Stop Trench IGBT technology for optimized performance characteristics.
Complies with AEC-Q101 automotive qualification standards.

Applications

Automotive power electronics systems
Hybrid electric vehicle inverters
Industrial motor drives

Procurement Notes

Verify the specific suffix 'HRC11' against the official datasheet to confirm the exact pinout and thermal specifications. Confirm AEC-Q101 compliance requirements if used in automotive designs. Check lifecycle status as some variants are scheduled for obsolescence. Ensure thermal management aligns with the 254 W dissipation rating.

Selection Notes

Select this component when low turn-on switching loss is critical due to the integrated SiC diode. Compare the 96 A continuous current rating against peak load requirements. Consider the TO-247N package for through-hole mounting constraints. Evaluate the 1.9 V saturation voltage impact on conduction losses relative to alternative trench IGBTs.

Part Context

This part belongs to the RGWxx65C series of 650V IGBTs designed for high-efficiency applications. It represents a hybrid approach combining standard IGBT switching with SiC diode rectification. The series targets demanding environments requiring robust switching speed and reduced thermal stress during operation.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing gate drive circuits before considering alternatives.