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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 83A TO-263L
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：83 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 40A
- Power - Max：227 W
- Switching Energy：240µJ (on), 330µJ (off)
- Input Type：Standard
- Gate Charge：110 nC
- Td (on/off) @ 25°C：42ns/148ns
- Test Condition：400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：92 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263L
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RGW80NL65DHRBTL is a single-channel silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes Field Stop Trench technology and integrates a Fast Recovery Diode (FRD). The device features a collector-emitter maximum voltage of 650 V and a continuous collector current of 83 A at 25°C. Typical saturation voltage is 1.9 V, with a gate-emitter maximum voltage of 30 V. Power dissipation reaches 227 W. Operating temperature ranges from -40°C to +175°C. It is housed in an SMD/SMT TO-263-3 package.
Feature Summary
- Field Stop Trench IGBT structure for low saturation voltage
- Integrated Fast Recovery Diode (FRD)
- AEC-Q101 qualified for automotive applications
Applications
- On-board chargers
- Off-board chargers
- DC-DC converters
- Power Factor Correction (PFC)
- Industrial inverters
Procurement Notes
Verify the specific suffix HRBTL against the official datasheet to confirm packaging details such as reel or cut tape specifications. Ensure the component meets RoHS compliance requirements for the target assembly process. Confirm that the TO-263-3 footprint matches the design layout before procurement.
Selection Notes
Select this component for high-current switching applications requiring automotive reliability. The 650V rating suits medium-voltage power conversion systems. Consider the 83A continuous current capability and 227W thermal dissipation when designing heatsinking solutions. Verify gate drive compatibility with the 30V maximum rating.
Part Context
This part belongs to ROHM's automotive-grade IGBT lineup designed for high-efficiency power electronics. It combines trench gate technology with integrated freewheeling diodes to reduce system complexity. The LPDL package offers robust surface-mount performance for industrial and electric vehicle charging infrastructure.
Replacement Considerations
Check for direct substitutes within the same ROHM series with identical pinouts and electrical characteristics. Verify thermal resistance and package dimensions if replacing with components from other manufacturers to ensure mechanical compatibility.
