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The RGWS00TS65GC13 is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes Field Stop Trench technology and is housed in a TO-247G package for through-hole mounting. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 88 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.1 V, a gate-emitter leakage current of 200 nA, and a power dissipation rating of 245 W. It operates within a temperature range of -40°C to +175°C.
Verify the specific suffix 'C13' against the official datasheet to confirm tube packaging and RoHS compliance status. Ensure the ordering part number matches the exact field stop trench specification. Cross-reference the manufacturer's latest documentation for any design-in recommendations or testing requirements before finalizing procurement.
Select this component when high current handling and low saturation voltage are required in a standard through-hole format. Compare the 88 A rating and 245 W dissipation against system thermal constraints. Consider the TO-247G footprint compatibility with existing PCB layouts and heatsinking solutions for effective heat removal during operation.
This IGBT belongs to ROHM's RGW series, characterized by field stop trench technology designed for efficiency. It serves as a discrete switching element within power electronics modules. The device is distinct from MOSFETs and other IGBT variants by its specific voltage and current ratings tailored for medium-power industrial applications.
Consult the manufacturer's replacement guide for direct equivalents. Verify pinout compatibility and electrical parameter margins before substituting with alternative part numbers.