RJH1CF7RDPQ-80#T2

Overview

The RJH1CF7RDPQ-80#T2 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a maximum collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 60 A. The device is housed in a TO-247-3 through-hole package, suitable for high-power applications. Key electrical parameters include a maximum power dissipation of 250 W and a collector-emitter saturation voltage of 2.4 V measured at a gate-emitter voltage of 15 V and a collector current of 35 A. The component supports a maximum junction temperature of 150°C and utilizes standard input type configuration.

Feature Summary

• High-voltage capability with 1200 V collector-emitter breakdown rating
• Robust current handling with 60 A continuous collector current specification
• Thermal efficiency optimized for high-power switching environments
• Standard input interface compatible with common gate drive circuits

Applications

• Solar power generator power conditioners
• Industrial motor drives
• General-purpose inverters

Procurement Notes

This specific part number is officially listed as obsolete or end-of-life, with discontinuation notices dating back to late 2022. Procurement must focus on verifying the authenticity of remaining stock from authorized distributors or secondary market suppliers. Buyers should carefully review datasheet revisions and packaging labels, as recent PCNs indicate updates to manufacturer labels and assembly sites. Ensure that any sourced units match the exact suffix specifications to guarantee compatibility with existing designs.

Selection Notes

Designers requiring this component should verify if newer generations within the RJH/RJP series offer improved performance metrics or availability. The transition to seventh-generation IGBT technology may provide lower saturation voltages or enhanced thermal characteristics for similar voltage and current ratings. Evaluate alternative packages or pin-compatible devices if the TO-247 form factor allows for substitution. Confirm that the 1200 V rating remains sufficient for the target application's peak voltage stresses before finalizing the selection.

Part Context

The RJH1CF7RDPQ-80#T2 belongs to the broader RJH1CF7 product family produced by Renesas Electronics. This series is engineered for high-voltage and high-current switching applications, specifically targeting industrial and renewable energy sectors. The component represents a discrete power semiconductor solution designed to handle significant power loads efficiently. Its classification as a single IGBT distinguishes it from modules or multi-chip configurations, offering flexibility for custom PCB layouts in power electronics systems.

Replacement Considerations

Direct replacement options are limited due to the discontinued status. Users should consult Renesas for updated equivalents within the RJP1CS or RJH/RJP65 series, depending on voltage requirements. Verify pinout compatibility and thermal resistance values when considering cross-series substitutions.