RJH60D7DPK-00#T0

RJH60D7DPK-00#T0

  • Description:IGBT TRENCH 600V 90A TO-3P
  • Series:-

SKU:e3f226260aeb Category: Brand:

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Product Detailed Parameters

  • Description:IGBT TRENCH 600V 90A TO-3P
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • IGBT Type:Trench
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):90 A
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 50A
  • Power - Max:300 W
  • Switching Energy:1.1mJ (on), 600µJ (off)
  • Input Type:Standard
  • Gate Charge:130 nC
  • Td (on/off) @ 25°C:60ns/190ns
  • Test Condition:300V, 50A, 5Ohm, 15V
  • Reverse Recovery Time (trr):100 ns
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-3P
  • Grade:-
  • Qualification:-

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RJH60D7DPK-00#T0

Overview

The Renesas RJH60D7DPK-00#T0 is a trench-gate Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 90 A at 25°C. The device operates with a standard input type and is housed in a TO-3P-3 (SC-65-3) through-hole package, rated for a maximum power dissipation of 300 W. Key electrical parameters include a gate charge of 130 nC, an on-state collector-emitter voltage of 2.2 V at 15 V gate drive and 50 A collector current, and a switching time of 60 ns turn-on and 190 ns turn-off. The junction temperature limit is 150°C.

Feature Summary

  • Utilizes trench gate technology to achieve low on-state voltage drop and efficient switching performance.
  • Designed for robust operation in high-frequency inverter applications up to 50 kHz.
  • Provides guaranteed short-circuit capability for enhanced system reliability.

Applications

  • Uninterruptible Power Supply (UPS) systems
  • Solar power generation inverters
  • Welding equipment

Procurement Notes

This component is officially listed as obsolete by the manufacturer. Verification of availability should focus on remaining stock from authorized distributors or secondary market suppliers. Buyers must confirm the specific manufacturing date code and ensure compliance with RoHS3 standards before procurement. Replacement planning is recommended due to the End-of-Life status.

Selection Notes

Select this IGBT for designs requiring a 600V, 90A single transistor in a TO-3P package. Ensure the gate driver can supply the required 130 nC charge and handle the specified switching times. Verify that the thermal management solution supports the 300 W power dissipation and maintains the junction temperature below 150°C under worst-case operating conditions.

Part Context

The RJH60D7 series belongs to Renesas' IGBT product line specifically engineered for inverter applications. This family is optimized for frequencies between 1 and 50 kHz. The RJH60D7DPK variant represents a specific packaging and taping configuration within this series, targeting industrial power conversion needs such as UPS and renewable energy systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, direct pin-compatible replacements should be identified through official Renesas obsolescence notices or cross-reference tools, ensuring equivalent voltage, current, and thermal ratings.

RJH60D7DPK-00#T0RJH60D7DPK-00#T0

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