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Product Detailed Parameters
- Description：IGBT TRENCH 600V 60A TO-3P
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：1.82V @ 15V, 30A
- Power - Max：235.8 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：45ns/85ns
- Test Condition：400V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr)：140 ns
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The RJH60F4DPK-00#T0 is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It is designed for high-speed power switching applications within the RJH60 series. The device utilizes trench gate technology to achieve fast switching characteristics and low conduction losses. It is housed in a TO-3P package, suitable for through-hole mounting on printed circuit boards. The component operates with a maximum collector-emitter voltage of 600 V and supports significant current handling capabilities typical of its class.
Feature Summary
- High-speed switching performance optimized for efficient power conversion
- Trench gate structure providing low saturation voltage and reduced switching energy
- Robust thermal design compatible with standard TO-3P mounting configurations
Applications
- High-frequency power supply circuits
- Industrial motor drive inverters
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify availability status directly with Renesas or authorized distributors, as lead times may vary due to manufacturing constraints. Confirm RoHS compliance and moisture sensitivity level requirements before integration into production workflows. Ensure ordering suffixes match specific packaging needs.
Selection Notes
Select this IGBT when designing circuits requiring 600V blocking capability with emphasis on switching speed over raw current capacity. Compare switching energy values against alternative trench IGBTs in the same voltage class. Ensure gate drive voltages align with the specified thresholds for optimal performance and reliability.
Part Context
This component belongs to the RJH60 series of single IGBTs from Renesas. The series includes variants with different current ratings and switching speeds, such as the RJH60D5DPK and RJH60D7ADPK. These devices share common packaging and basic electrical characteristics but differ in specific dynamic parameters tailored for distinct power levels.
Replacement Considerations
Direct substitutes are not explicitly listed in public documentation. Evaluate other Renesas trench IGBTs like the RJH60D0DPK or RJH60D5DPK for pin-compatible alternatives with adjusted current ratings. Cross-reference datasheets for matching Vce(sat), switching times, and package dimensions.
