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Product Detailed Parameters
- Description：IGBT TRENCH 600V 80A TO-3P
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 40A
- Power - Max：260.4 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：53ns/105ns
- Test Condition：400V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr)：140 ns
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The RJH60F5DPK-00#T0 is a trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics. It features a 600V collector-emitter breakdown voltage and a continuous collector current of 75A at 25°C. The device utilizes a TO-3P (SC-65-3) through-hole package, suitable for high-power applications. Key electrical parameters include a maximum on-state voltage of 2.2V at 15V gate drive and 37A collector current. Switching characteristics are defined by turn-on and turn-off times of 50ns and 135ns respectively, measured under specific test conditions. The component supports a maximum junction temperature of 150°C and has a power dissipation rating of 200W.
Feature Summary
- Utilizes trench gate technology for optimized switching performance and low conduction losses.
- Designed with robust short-circuit capability to withstand fault conditions in inverter circuits.
- Engineered for operation in high-frequency applications ranging from 1kHz to 50kHz.
Applications
- Uninterruptible Power Supply (UPS) systems
- Motor control drives
- Solar power generation inverters
- Welding equipment
Procurement Notes
Verify the exact suffix and manufacturer details against official Renesas documentation before integration. Confirm availability status as distribution channels may list obsolete or limited-stock items. Ensure compliance with RoHS3 specifications and moisture sensitivity levels required for your assembly process. Cross-reference datasheet revisions to confirm pinout and thermal characteristics match your design requirements.
Selection Notes
Select this component for designs requiring 600V blocking voltage and moderate current handling up to 75A. Consider the TO-3P package for through-hole mounting and efficient heat sinking. Evaluate the 2.2V Vce(on) for efficiency needs at 37A loads. Verify that the switching speeds align with your inverter frequency targets between 1kHz and 50kHz. Check thermal management capabilities given the 200W power dissipation limit.
Part Context
This IGBT belongs to the RJH series, specifically designed for inverter applications. It is part of Renesas' portfolio for power conversion systems. The device is often associated with the RJP/H60Fx family mentioned in single PFC solutions. It serves as a key switching element in AC-DC and DC-AC conversion topologies.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Renesas technical support for direct replacements or equivalent trench-gate IGBTs with similar voltage and current ratings.
