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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 20A/50A 8WPAK
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：20A, 50A
- Rds On (Max) @ Id, Vgs：7mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：7.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1660pF @ 10V
- Power - Max：15W, 35W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-WFDFN Exposed Pad
- Supplier Device Package：8-WPAK
- Grade：-
- Qualification：-
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Overview
The RJK03P9DPA-00#J5A is a P-channel power MOSFET manufactured by Renesas Electronics. It features a WPAK-8 (WSON 5x6) surface-mount package and utilizes silicon technology. The device is rated for a drain-source voltage of 30V and supports a continuous drain current of 45A. Key electrical parameters include a maximum on-resistance of 2.8mΩ at VGS = -10V and 3.5mΩ at VGS = -4.5V. The component is RoHS compliant, lead-free, and halogen-free. It is designed for high-density installation with low drive current requirements.
Feature Summary
- Capable of operation with 4.5V gate drive logic levels
- Optimized for high-speed switching applications
- Designed for low on-resistance to minimize conduction losses
- Supports high-density mounting in compact form factors
Applications
- Motor driver circuits
- Load switch applications
- Power management systems requiring P-channel control
Procurement Notes
Verify the specific suffix #J5A against official Renesas documentation to confirm packaging details such as reel or cut tape configuration. Confirm end-of-life status and last-time-buy availability through authorized distributors. Ensure compliance with RoHS and halogen-free requirements for your specific manufacturing standards.
Selection Notes
Select this component when a P-channel MOSFET with 30V rating and 45A current capacity is required. Consider the WPAK-8 package for space-constrained designs. Verify that the system's gate drive voltage meets the minimum threshold for the desired on-resistance performance. Compare thermal dissipation capabilities against the application's power requirements.
Part Context
This part belongs to the RJK series of power MOSFETs from Renesas Electronics. The series is characterized by low on-resistance and robust switching performance. The RJK03P9DPA variant specifically addresses P-channel needs within the 30V voltage class, complementing N-channel counterparts like the RJK03M5DPA.
Replacement Considerations
Check for direct pin-compatible substitutes within the RJK series. Evaluate alternative P-channel MOSFETs with similar 30V/45A ratings and WPAK-8 packages. Verify thermal and electrical equivalence before substitution.
