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The Renesas RJM0603JSC is a silicon N/P Channel Power MOS FET array containing six independent transistors (three N-channel and three P-channel) in a single HSOP-20 package. It is designed for high-speed power switching applications and complies with AEC-Q101 automotive standards. The device supports 4.5 V gate drive, featuring low on-resistance of 21 mΩ (Nch) and 42 mΩ (Pch) at 4.5 V. Maximum ratings include a drain-source voltage of ±60 V, continuous drain current of ±20 A, and channel dissipation of 54 W.
Verify the specific ordering suffix '-00-12' to confirm the shipping container type and quantity, as datasheets may list variations. Confirm the latest product information directly with a Renesas Electronics sales office before purchasing, as specifications are subject to change without prior notice. Ensure compliance with applicable export control laws if exporting the technology.
Select this component when a compact solution requiring both N-channel and P-channel switching is needed. The HSOP-20 package provides a thermal impedance of 2.78°C/W. Designers must account for the 54 W channel dissipation limit at 25°C case temperature and utilize derating curves for higher operating temperatures. Verify that the application voltage does not exceed the ±60 V rating.
This part belongs to the RJM series of multi-transistor arrays manufactured by Renesas Electronics Corporation. It utilizes the PRSP0020DF-A package code, corresponding to the HSOP-20 form factor. The device integrates multiple discrete functions into a single surface-mount component to reduce board space.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Renesas Electronics or authorized distributors for equivalent automotive-grade dual-channel or multi-channel MOSFET arrays.