RJM0603JSC-00#12

RJM0603JSC-00#12

  • Description:MOSFET 3N/3P-CH 60V 20A 20HSOP
  • Series:-

SKU:1092f90c0742 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 3N/3P-CH 60V 20A 20HSOP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Technology:MOSFET (Metal Oxide)
  • Configuration:3 N and 3 P-Channel (3-Phase Bridge)
  • FET Feature:Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:20A
  • Rds On (Max) @ Id, Vgs:20mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2600pF @ 10V
  • Power - Max:54W
  • Operating Temperature:175°C
  • Mounting Type:Surface Mount
  • Package / Case:20-SOIC (0.433", 11.00mm Width) Exposed Pad
  • Supplier Device Package:20-HSOP
  • Grade:Automotive
  • Qualification:AEC-Q101

Download product information

RJM0603JSC-00#12

Overview

The Renesas RJM0603JSC is a silicon N/P Channel Power MOS FET array containing six independent transistors (three N-channel and three P-channel) in a single HSOP-20 package. It is designed for high-speed power switching applications and complies with AEC-Q101 automotive standards. The device supports 4.5 V gate drive, featuring low on-resistance of 21 mΩ (Nch) and 42 mΩ (Pch) at 4.5 V. Maximum ratings include a drain-source voltage of ±60 V, continuous drain current of ±20 A, and channel dissipation of 54 W.

Feature Summary

  • Six-in-one integration of three N-channel and three P-channel MOSFETs for high-density mounting
  • AEC-Q101 compliant for automotive reliability requirements
  • Capable of operation with 4.5 V gate drive signals
  • Low static drain-to-source on-state resistance

Applications

  • Automotive power switching circuits
  • High-speed power control systems
  • Motor driver interfaces

Procurement Notes

Verify the specific ordering suffix '-00-12' to confirm the shipping container type and quantity, as datasheets may list variations. Confirm the latest product information directly with a Renesas Electronics sales office before purchasing, as specifications are subject to change without prior notice. Ensure compliance with applicable export control laws if exporting the technology.

Selection Notes

Select this component when a compact solution requiring both N-channel and P-channel switching is needed. The HSOP-20 package provides a thermal impedance of 2.78°C/W. Designers must account for the 54 W channel dissipation limit at 25°C case temperature and utilize derating curves for higher operating temperatures. Verify that the application voltage does not exceed the ±60 V rating.

Part Context

This part belongs to the RJM series of multi-transistor arrays manufactured by Renesas Electronics Corporation. It utilizes the PRSP0020DF-A package code, corresponding to the HSOP-20 form factor. The device integrates multiple discrete functions into a single surface-mount component to reduce board space.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Renesas Electronics or authorized distributors for equivalent automotive-grade dual-channel or multi-channel MOSFET arrays.

RJM0603JSC-00#12RJM0603JSC-00#12

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