RJM0603JSC-00#13

Description：MOSFET 3N/3P-CH 60V 20A 20HSOP
Series：-

SKU:4811aa000a02 Category: FET, MOSFET Arrays Brand: Renesas Electronics Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 3N/3P-CH 60V 20A 20HSOP
Series：-
Mfr：Renesas Electronics Corporation
Package：-
Technology：MOSFET (Metal Oxide)
Configuration：3 N and 3 P-Channel (3-Phase Bridge)
FET Feature：Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：20A
Rds On (Max) @ Id, Vgs：20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2600pF @ 10V
Power - Max：54W
Operating Temperature：175°C
Mounting Type：Surface Mount
Package / Case：20-SOIC (0.433", 11.00mm Width) Exposed Pad
Supplier Device Package：20-HSOP
Grade：Automotive
Qualification：AEC-Q101

Download product information

RJM0603JSC-00#13

Overview

The Renesas RJM0603JSC-00#13 is a MOSFET array featuring three N-channel and three P-channel devices in a 20-HSOP package. It supports a drain-source voltage of 60V and continuous drain current of 20A at 25°C. The component delivers a maximum power dissipation of 54W and operates up to 175°C junction temperature. Key electrical parameters include a maximum on-resistance of 20 milliohms at 10V gate drive, input capacitance of 2600pF, and gate charge of 43nC. It is AEC-Q101 qualified for automotive applications.

Feature Summary

Integrated three-phase bridge configuration with complementary N-channel and P-channel MOSFETs
Logic-level gate operation enabled by 4.5V drive capability
Automotive-grade reliability certified under AEC-Q101 standards

Applications

Automotive motor control systems
Three-phase inverter circuits
Power management modules requiring high-current switching

Procurement Notes

This component is officially listed as End-of-Life (EOL) by the manufacturer. Procurement should focus on verifying stock availability through authorized distributors or checking for valid replacement part numbers. Ensure that any sourced units match the original RoHS3 compliance and packaging specifications to maintain system integrity.

Selection Notes

Select this device for applications requiring integrated three-phase switching with low on-resistance. Verify that the 60V rating and 20A current capacity align with load requirements. Consider the exposed pad thermal design for adequate heat dissipation given the 54W power rating. Confirm compatibility with logic-level drivers due to the 4.5V gate threshold specification.

Part Context

The RJM0603 series comprises power MOSFET arrays designed for high-efficiency switching. This specific model integrates six transistors into a single surface-mount package, reducing board space compared to discrete solutions. It targets automotive and industrial environments where reliability and thermal performance are critical constraints.

Replacement Considerations

The RJM0603JSC-00#12 is documented as a substitute part number for this component. Verify pinout compatibility and electrical parameter equivalence before implementation.