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Product Detailed Parameters
- Description：HIGH SPEED IGBT
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The RJP3034DPP-90#T2F is a high-speed Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. This component is designed for applications requiring rapid switching capabilities and efficient power handling. It utilizes a TO-220 package configuration, which facilitates effective thermal management in power electronic circuits. The device is compliant with RoHS standards, indicating lead-free construction suitable for environmentally conscious manufacturing processes.
Feature Summary
- High-speed switching performance optimized for dynamic power control applications
- RoHS compliant lead-free construction ensuring environmental safety standards
Applications
- Industrial motor drive systems
- High-frequency power conversion circuits
- Inverter topologies requiring fast transient response
Procurement Notes
Verify the specific manufacturer part number against official Renesas documentation to ensure authenticity. Confirm that the received components match the specified TO-220 insulated package type. Check for RoHS compliance markings on the physical device to guarantee adherence to material restrictions. Ensure storage conditions maintain component integrity prior to assembly.
Selection Notes
Select this IGBT when high-speed switching characteristics are critical to system efficiency. Consider the TO-220 package for adequate heat dissipation in moderate power scenarios. Evaluate thermal resistance requirements against the application's operating temperature range. Ensure gate drive circuitry supports the specific switching speed capabilities of this device.
Part Context
This component belongs to Renesas' portfolio of power semiconductor devices, specifically within the IGBT category. It serves as a key switching element in modern power electronics, bridging the gap between MOSFET speed and bipolar transistor current handling. The designation indicates a specific variant within the broader RJP series designed for distinct performance profiles.
Replacement Considerations
Consult official Renesas substitution guides for verified alternatives. Cross-reference electrical parameters such as voltage ratings and switching speeds before considering generic equivalents. Ensure any substitute maintains compatible package dimensions and thermal characteristics.
