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Product Detailed Parameters
- Description：HIGH SPEED IGBT
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The RJP3047DPK-80#T2 is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It is designed for high-power switching applications in automotive and industrial sectors. The component integrates a fast recovery diode, functioning as a single-phase IGBT module. Key electrical parameters include a collector-emitter voltage rating of 800V and a continuous collector current capacity suitable for power conversion circuits. The device utilizes surface-mount packaging to facilitate automated assembly and thermal management in compact power electronic designs.
Feature Summary
- Integrates a complementary fast recovery diode within the IGBT structure for efficient single-phase operation
- Engineered for robust performance in high-voltage automotive and industrial power conversion systems
Applications
- Automotive power electronics
- Industrial motor drives
- Power supply units
Procurement Notes
Verify the manufacturer part number against official Renesas documentation to ensure authenticity. Confirm that the specific suffix matches the required tape-and-reel configuration. Check for RoHS compliance status and any recent product change notices regarding package or material updates before placing orders.
Selection Notes
Select this component based on the 800V blocking voltage requirement and the need for integrated freewheeling diode functionality. Ensure the thermal resistance characteristics align with the system's heat dissipation capabilities. Validate that the surface-mount form factor fits the target PCB layout constraints for the intended automotive or industrial application.
Part Context
This IGBT belongs to Renesas' discrete power semiconductor portfolio, which supports high-efficiency energy conversion. The RJP3047 series is tailored for applications requiring reliable switching at high voltages. Renesas provides these components to support the development of advanced power modules in electric vehicles and industrial automation equipment.
Replacement Considerations
Consult official cross-reference guides for compatible alternatives. Verify that any substitute maintains identical voltage ratings, current handling, and pinout configurations. Ensure the replacement component meets the same automotive or industrial qualification standards required by the original design.
