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Product Detailed Parameters
- Description：IGBT
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The RJP30H1DPP-M1#T2 is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It utilizes trench gate and thin wafer technology, characteristic of the G6H-II series. The component features high-speed switching capabilities with a typical turn-on time of 80 ns and a typical turn-off time of 150 ns. It is supplied in bulk packaging and complies with RoHS standards, being lead-free.
Feature Summary
- Utilizes trench gate and thin wafer technology for enhanced performance
- Provides high-speed switching characteristics suitable for power applications
Applications
- Power conversion systems
- Industrial motor drives
- Inverter circuits
Procurement Notes
Verify the specific suffix #T2 against official Renesas documentation to confirm the exact tape-and-reel or bulk configuration intended for your assembly process. Ensure that the RoHS compliance status aligns with your environmental regulations. Cross-reference the datasheet revision date to guarantee compatibility with current design specifications and thermal management requirements.
Selection Notes
Select this IGBT when high-speed switching is required alongside robust power handling capabilities. The G6H-II series technology offers advantages in efficiency and thermal performance compared to older planar designs. Evaluate the specific switching times against your system's frequency requirements to ensure optimal operation without excessive losses.
Part Context
This component belongs to the broader category of discrete power semiconductors offered by Renesas Electronics. It is part of the G6H-II series, which focuses on advanced trench gate structures. This series is designed to meet the demands of modern power electronics applications requiring higher efficiency and faster response times than traditional IGBT technologies.
Replacement Considerations
Consult the official Renesas cross-reference guide for direct substitutes. Verify pinout compatibility and electrical ratings before replacing. Generic IGBT replacements may not match the specific switching speeds or thermal characteristics of the G6H-II series.
