RJP60F0DPM-00#T1

$3.46

Description：IGBT TRENCH 600V 50A TO-3PFM
Series：-

SKU:563328f3aec9 Category: Single IGBTs Brand: Renesas Electronics Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 600V 50A TO-3PFM
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：1.82V @ 15V, 25A
Power - Max：40 W
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：46ns/70ns
Test Condition：400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO-3PFM
Grade：-
Qualification：-

Download product information

RJP60F0DPM-00#T1

Overview

The RJP60F0DPM-00#T1 is a trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 45 A at 25°C. The device utilizes a TO-3PFM through-hole package, providing a maximum power dissipation capacity of 40 W. Key electrical characteristics include a gate charge of 75 nC and a typical switching time of 45 ns for turn-on and 100 ns for turn-off under standard test conditions. The component supports an operating junction temperature up to 150°C.

Feature Summary

Employs trench-gate technology to achieve low saturation voltage and efficient switching performance.

Applications

Power Factor Correction (PFC) circuits
Uninterruptible Power Supply (UPS) systems
Solar power generation inverters
Welding equipment

Procurement Notes

Verify the specific ordering suffix #T1 to confirm tube packaging configuration. Confirm RoHS3 compliance status as required by project specifications. Check for End-of-Life notifications or Product Change Notices regarding label updates or discontinuation schedules before finalizing procurement plans.

Selection Notes

Select this component for designs requiring a 600V rated IGBT with moderate current handling capabilities in a through-hole form factor. Ensure the thermal management solution can dissipate up to 40 W while maintaining the junction temperature within the 150°C limit. Verify that the gate drive circuitry aligns with the specified 75 nC gate charge requirements.

Part Context

This part belongs to the RJP/H60Fx series of IGBTs designed for high-frequency applications. It is positioned alongside other variants like the RJP60V0DPM-00#T1 within the Renesas portfolio for power conversion topologies. The series targets industries such as industrial motor control and renewable energy systems.

Replacement Considerations

Consult official Renesas documentation for qualified replacement parts. Cross-reference parameters such as Vces, Ic, and package type when evaluating alternatives from other manufacturers.